METHOD OF MANUFACTURING THIN FILM TRANSISTOR

摘要

A method for manufacturing a thin film transistor is provided to control conveniently the width of a gate electrode which is being used as a mask for preventing the ion implantation into the active layer, by performing a dry-etching to the gate electrode. A first insulating layer is formed on a substrate(S10). An active layer is formed on the first insulating layer(S20). A second insulating layer is formed at a part of the active layer(S30). A conductive thin film is formed on the second insulating layer, and a gate electrode having a first thickness is formed by etching the conductive thin film(S50). A mask pattern is formed on the gate electrode(S60). A first ion is implanted into the substrate on which the mask pattern is formed(S70). The gate electrode having a narrower second thickness than the first thickness is formed by performing a dry-etching to the gate electrode(S80). The mask pattern is removed(S90). A first impurity region and a second impurity region are formed in the active layer by implanting a second ion into the substrate by using the gate electrode as a mask(S100).