| 摘要 |
A method for manufacturing a tilt mirror is provided to prevent scattered reflection and to increase reflectance by using an etched tilt surface for controlling an angle of a reflective mirror and a planar surface made by a polishing process. A semiconductor wafer(2) is sliced from a semiconductor ingot at a surface with a tilt angle of 9.74 degree. A part of an upper surface of the semiconductor wafer is covered with a photoresist(3). The photoresist on a portion to be etched is removed by a photolithography method. The photoresist-removed portion is etched by using an anisotropic etching solution to form a surface having a tilt angle of 54.74 degree with respect to the surface. A reflective metal is deposited on a lower surface of the semiconductor wafer excluding a tilt surface to form a coating layer(4). The semiconductor wafer on which a metal thin film is deposited is cut to complete a tilt mirror having a tilt angle of 45 degree.
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