发明名称 |
Semiconductor memory device for internally controlling strength of output driver |
摘要 |
Provided is a semiconductor memory device that is capable of internally controlling a strength of an output driver. The semiconductor memory device includes: an OCD (off chip driver) control signal generator for decoding EMRS and addresses to generate a plurality of external strength control signals or an internal driving signal; a self control signal generator for detecting a level of a driving voltage to generate a plurality of internal strength control signals in response to the internal driving signal; a control signal generator for generating a strength control signal in response to the external strength control signals or the internal strength control signals; and a data output driver for outputting data, the strength of the data output driver being controlled according to the strength control signal.
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申请公布号 |
US7355448(B2) |
申请公布日期 |
2008.04.08 |
申请号 |
US20050176394 |
申请日期 |
2005.07.08 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
CHUN JUN-HYUN |
分类号 |
H03K19/0175;H03K19/094 |
主分类号 |
H03K19/0175 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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