THE ELECTRONIC DEVICES USING CARBON NANOTUBES HAVING VERTICAL STRUCTURE AND THE MANUFACTURING METHOD THEREOF

摘要

Electronic devices using carbon nano tubes having a vertical structure and a method for manufacturing the same are provided to improve contact characteristic and to simplify the process by using a selective silicon growth method for connecting the carbon nano tubes. A substrate on which a silicon source(3) is formed is prepared. A first dielectric(4) is formed on the substrate. The first dielectric is etched so that an upper surface of the silicon source is exposed. A second dielectric(5) is formed on the silicon source. The second dielectric is patterned to form a gate(7). A third dielectric(8) is formed on the gate, The third dielectric and the second dielectric are etched to form a through hole where a carbon nano tube channel is formed. After a fourth dielectric surrounding the third dielectric is formed on the through hole and the third dielectric, the third dielectric is etched to form a spacer. A metal catalyst is formed on the silicon source. The carbon nano tube is vertically grown on the silicon source by using the metal catalyst. A fifth dielectric(14) is formed on the through hole where the carbon nano tube channel is formed and on the third dielectric. After the fifth dielectric is patterned to expose the carbon nano tube channel, a silicon drain(16) is formed.