发明名称 |
Auto-precharge control circuit in semiconductor memory and method thereof |
摘要 |
An auto-precharge control circuit in a semiconductor memory and method thereof, where the auto-precharge starting point may vary. The auto-precharge starting point may vary in response to at least one control signal. The auto-precharge starting point may vary in accordance with frequency and/or latency information. The auto-precharge starting point may vary in response to at least one control signal including clock frequency information. The auto-precharge starting point may vary depending on a latency signal received from a mode register setting command.
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申请公布号 |
US7355912(B2) |
申请公布日期 |
2008.04.08 |
申请号 |
US20020268732 |
申请日期 |
2002.10.11 |
申请人 |
SAMSUNG ELECTRONICS, CO,, LTD. |
发明人 |
PARK SANG-KYUN;LEE HO-CHEOL |
分类号 |
G11C7/00;G11C11/407;G11C7/10;G11C7/12;G11C7/22;G11C11/4063;G11C11/4076;G11C11/409;G11C11/4094 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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