发明名称 |
Memory circuit with supply voltage flexibility and supply voltage adapted performance |
摘要 |
The inventive memory circuit comprises a plurality of memory cells. The memory circuit further comprises a memory access means being controlled by at least one control signal. In addition, a control means for generating the at least one control signal is contained in the memory circuit, with the control means comprising a delay means. The delay means delays a switching of the at least one control signal. The delay time is adjustable in view of the applied supply voltage.
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申请公布号 |
US7355915(B2) |
申请公布日期 |
2008.04.08 |
申请号 |
US20050212082 |
申请日期 |
2005.08.24 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GOUIN VINCENT;COSTE JEAN-PATRICE;CHANUSSOT CHRISTOPHE |
分类号 |
G11C7/02;G11C7/06;G11C7/10;G11C7/14;G11C7/22 |
主分类号 |
G11C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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