3D STRUCTURE LAMINATED COMPOUND SEMICONDUCTOR SOLID-STATE IMAGE SENSOR AND A METHOD FOR MANUFACTURING THE SAME

摘要

A 3-dimensional structure laminated compound semiconductor solid-state image sensor and a method for manufacturing the same are provided to reduce the degradation of photosensitive efficiency and charge capacity and to implement a micro pixel by maximizing a photoresist area of a photodiode to increase the amount of incident light. A photodiode region(206) is formed on a first conductive type semiconductor substrate(204) and comprised of a second conductive type impurity layer. A signal detection region(208) is separated from the photodiode region and comprised of a second conductive type impurity layer. Plural metal lines(203) are electrically connected to the signal detection region. A transfer gate(202) is formed on the first conductive type semiconductor substrate. The transfer gate is connected to transmit charges between the photodiode region and the signal detection region. Plural interlayer dielectrics(210) are formed on the first conductive type semiconductor substrate including the photodiode region, the transfer gate, and the signal detection region. A compound semiconductor epi layer(201) is formed by implanting P type and N type impurities into a space between each interlayer dielectric. The space is formed by etching the interlayer dielectric.