发明名称 |
Non-volatile semiconductor memory device having non-selected word lines adjacent to selected word lines being charged at different timing for program disturb control |
摘要 |
A non-volatile semiconductor memory device comprises a memory cell array of data-rewritable non-volatile memory cells or memory cell units containing the memory cells, and a plurality of word lines each commonly connected to the memory cells on the same row in the memory cell array. In write pulse applying during data writing, a high voltage for writing is applied to a selected word line, and an intermediate voltage for writing is applied to at least two of non-selected word lines. The beginning of charging a first word line located between the selected word line and a source line to a first intermediate voltage for writing is followed by the beginning of charging a second word line located between the selected word line and a bit line contact to a second intermediate voltage for writing.
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申请公布号 |
US7355887(B2) |
申请公布日期 |
2008.04.08 |
申请号 |
US20050104599 |
申请日期 |
2005.04.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKAMURA HIROSHI;TANAKA TOMOHARU |
分类号 |
G11C11/34;G11C16/06;G11C7/00;G11C16/02;G11C16/04;G11C16/10;G11C16/30 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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