Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies

摘要

High electron mobility transistors (HEMT) are provided having an output power of greater than 3.0 Watts when operated at a frequency of at least 30 GHz. The HEMT has a power added efficiency (PAE) of at least about 20 percent and/or a gain of at least about 7.5 dB. The total width of the HEMT is less than about 6.0 mm.