| 摘要 |
By using a disposable spacer approach for forming drain and source regions prior to an amorphization process for re-crystallizing a semiconductor region in the presence of a stressed spacer layer, possibly in combination with enhanced anneal techniques, such as laser and flash anneal processes, a more efficient strain-generating mechanism may be provided. Furthermore, the spacer for forming the metal silicide may be provided with reduced width, thereby positioning the respective metal silicide regions more closely to the channel region. Consequently, an overall enhanced performance may be obtained on the basis of the above-described techniques.
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