发明名称 |
COMPOUND OXIDE FILM AND METHOD FOR MANUFACTURING SAME, AND DIELECTRIC MATERIAL, PIEZOELECTRIC MATERIAL, CAPACITOR, PIEZOELECTRIC ELEMENT AND ELECTRONIC DEVICE WHICH INCLUDE COMPOUND OXIDE FILM |
摘要 |
A compound oxide film having high crystallinity is provided by forming a compound oxide film on the surface of a base body and baking the compound oxide film in an atmosphere gas having an oxygen partial pressure of 1x10^-3Pa or less at a temperature of 400°C or higher. A method for manufacturing such compound oxide film is also provided. Furthermore, a dielectric material and piezoelectric material including such compound oxide film, a capacitor and a piezoelectric element including such material, and an electronic device including such elements are provided. |
申请公布号 |
KR20080031268(A) |
申请公布日期 |
2008.04.08 |
申请号 |
KR20087000682 |
申请日期 |
2008.01.10 |
申请人 |
SHOWA DENKO KABUSHIKI KAISHA |
发明人 |
SHIRAKAWA AKIHIKO;KAWASAKI TOSHIYA;FUKUNAGA HIROFUMI |
分类号 |
C01G23/00;H01G4/33;H01L41/187;H01L41/22;H01L41/24;H01L41/317 |
主分类号 |
C01G23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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