PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A phase change memory device and a method for manufacturing the same are provided to minimize thermal interference between phase change patterns by increasing transfer paths with respect to heat generated in an interface between a first surface and a first phase change pattern and transferred to a second phase change pattern. A first electrode(71) having a first surface(S1) is arranged on a substrate. A second electrode(72) has a second surface(S2) located at another level with respect to the first surface. The second electrode is separated from the first electrode. A first phase change pattern(77) is contacted to the first surface. A second phase change pattern(78) is contacted to the second surface. An interlayer dielectric(57) is arranged on the substrate and has first and second contact holes(61,62). The first surface and the first phase change pattern are arranged in the first contact hole. The second surface and the second phase change pattern are arranged in the second contact hole.