SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

摘要

A substrate processing apparatus and a substrate processing method are provided to prevent continuous yield rate decrease even though the ultra pure water adhering time exceeds the predetermined time. Wafers are positioned in order, and a polishing unit(2) comprises a plurality of polishing platen(P1-P3) for polishing a metal film on a surface of the wafer. The wafer conveyance within the relation of each polishing platen is performed by a rotation head instrument(4) simultaneously. The wafer polished at the final polishing platen is transferred into a cleaning unit(3) and cleaned. The wafer conveyance from the polishing unit to the cleaning unit is performed by a load/unload unit(5), a wafer inversion unit(U2) and a wet robot(R2). An apparatus control unit(11) controls all operations of each unit within the predetermined time from completing the final polishing, as a beginning state of the cleaning process about the wafer which is polished at the polishing platen at the final step.