发明名称 Method for manufacturing semiconductor device
摘要 In the case where an integrated circuit formed of a thin film is formed over a substrate and peeled from the substrate, a fissure (also referred to as crack) is generated in the integrated circuit in some cases. The present invention is to restrain the generation of a fissure by fixing the proceeding direction of etching in one direction to make a peeled layer warp in one direction in accordance with the proceeding of etching. For example, the proceeding of etching can be controlled by utilizing the fact that a portion where a substrate is in contact with a base insulating layer is not etched in the case of patterning a peeling layer provided over the substrate, then forming the base insulating layer, and then fixing a peeled layer by the portion where the substrate is in contact with the base insulating layer.
申请公布号 US7354801(B2) 申请公布日期 2008.04.08
申请号 US20050229497 申请日期 2005.09.20
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 SUGIYAMA EIJI;ITO KYOSUKE
分类号 H01L21/44 主分类号 H01L21/44
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