发明名称 Method of making iron silicide and method of making photoelectric transducer
摘要 A solar cell comprises a substrate, and a metal electrode layer, a p-i-n junction, and a transparent electrode layer which are successively laminated on the substrate. The p-i-n junction comprises an n layer, an i layer, and a p layer which are laminated in this order. The i layer is made of an amorphous iron silicide film containing hydrogen in accordance with the present invention, and is formed on the n layer by supplying an iron vapor into a plasma of a material gas in which a silane type gas and a hydrogen gas are mixed. In the i layer, dangling bonds of silicon atoms and/or iron atoms are terminated with hydrogen, whereby a number of trap levels which may occur in the amorphous iron silicide film are eliminated.
申请公布号 US7354857(B2) 申请公布日期 2008.04.08
申请号 US20050206999 申请日期 2005.08.19
申请人 TDK CORPORATION;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MOROOKA HISAO;YAMADA HIROSHI;NISHI KAZUO
分类号 H01L21/44;H01L31/04;C23C16/42;C23C16/505;H01L21/285 主分类号 H01L21/44
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