| 摘要 |
There are many inventions disclosed herein. In one aspect, the present inventions are directed to methods and circuitry to control, adjust, determine and/or modify the absolute and/or relative positioning or location (i.e., absolute or relative amount) of reference current which is employed by sensing circuitry to sense the data state of a memory cell during a read operation of one or more memory cells. The control, adjustment, determination and/or modification of the reference current levels may be implemented using many different, distinct and/or diverse techniques and circuitry, including both analog and digital techniques and circuitry.
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