发明名称 |
Multi-channel transistor structure and method of making thereof |
摘要 |
A method of forming an electronic device includes, forming a first channel coupled to a first current electrode and a second current electrode and forming a second channel coupled to the first current electrode and the second current electrode. The method also includes the second channel being substantially parallel to the first channel within a first plane, wherein the first plane is parallel to a major surface of a substrate over which the first channel lies. A gate electrode is formed surrounding the first channel and the second channel in a second plane, wherein the second plane is perpendicular to the major surface of the substrate. The resulting semiconductor device has a plurality of locations with a plurality of channels at each location. At small dimensions the channels form quantum wires connecting the source and drain.
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申请公布号 |
US7354831(B2) |
申请公布日期 |
2008.04.08 |
申请号 |
US20050199482 |
申请日期 |
2005.08.08 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ORLOWSKI MARIUS K. |
分类号 |
H01L21/336;H01L21/00;H01L21/84;H01L27/01;H01L27/12;H01L31/0392 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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