| 发明名称 |
Silicon on diamond-like carbon devices |
| 摘要 |
Embodiments of the invention provide substrate with an insulator layer on the substrate. The insulator layer may include diamond-like carbon. A device, such a tri-gate transistor may be formed on the diamond-like carbon layer.
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| 申请公布号 |
US7355247(B2) |
申请公布日期 |
2008.04.08 |
| 申请号 |
US20050072347 |
申请日期 |
2005.03.03 |
| 申请人 |
INTEL CORPORATION |
发明人 |
SHAHEEN MOHAMAD A.;RAVI KRAMADHATI V. |
| 分类号 |
H01L27/01;H01L27/12;H01L31/0392 |
主分类号 |
H01L27/01 |
| 代理机构 |
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