| 摘要 |
A semiconductor memory device is provided to reduce current consumption when a bit line sense amplifier is enabled, by driving bit line sense amplifiers selectively during pullup/pulldown operation. According to a semiconductor memory device reading/writing data from/to a plurality of cells, a first and a second bit line sense amplifier array(310,320) are enabled to amplify data applied to a first and a second bit line pair connected to each cell. A control unit(500) enables one of the first and the second bit line sense amplifier array, and then enables the other bit line sense amplifier array, in response to an active signal and column address information.
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