| 摘要 |
<p>A method for forming a gate of a semiconductor device is provided to prevent problems due to a horn which is generated through an ion injection and thermal processes of a formation of gate. An anisotropic etching is performed on an active region of a silicon substrate(11) having an isolation layer(12) defining the active region to form a first groove. An ion implantation process is performed by introducing an angle into a side of the first groove. A heat treatment process is performed on the resultant substrate structure including the first ion-implanted groove to form a side part of the first ion-implanted groove with a silicon oxide layer. A dielectric(15) for a sacrificial spacer is formed on the entire surface of the substrate including both sides of the first groove. An anisotropic etching is formed on the substrate under a lower surface of the first groove by using the dielectric for a sacrificial spacer as an etching mask to form a second groove(16) having a bulb-type profile including the first groove. The dielectric for a sacrificial spacer is removed. Gate materials are formed in turn on the substrate including the second groove.</p> |
