| 摘要 |
<p>A flash memory device for improving program characteristics is provided to reduce RC loading of a string selection line by connecting the string selection line to a metal line. A NAND memory array includes a first selective transistor, a second selective transistor, a plurality of memory cells, and a strapping line. The first selective transistor is connected to a first selective line. The second selective transistor is connected to a second selective line. The memory cells are connected to word lines and are serially connected between the first selective transistor and the second selective transistor. The strapping line is electrically connected to the first selective line. A plurality of bit lines are arranged in a strapping region.</p> |
