FLASH MEMORY DEVICE FOR REDUCING PROGRAMMING TIME OF MULTI LEVEL CELL AND PROGRAMMING METHOD OF THE SAME

摘要

A flash memory device for reducing programming time of a multi level cell and a programming method of the same are provided to reduce the programming time, by programming MSB(Most Significant Bit) data and LSB(Least Significant Bit) data regardless of the conventional three times redaing. A memory cell stores one of multi-level data constituting MSB(Most Significant Bit) and LSB(Least Significant Bit) with different threshold voltages. A first buffer inputs the MSB data and the LSB data to be stored in the memory cell. A second buffer inputs the LSB data stored in the memory cell. A data loader generates a number of load signals according to the type of the MSB data of the first buffer and the LSB data of the second buffer(S950), and programs the MSB data and the LSB data to the memory cell in response to the load signals(S920,S960).