| 摘要 |
A semiconductor device is provided to restrain the increase of a reverse off-state leak current by forming a third anode diffusion layer so as to surround a first and second reverse conductive-type anode diffusion layers. A first and second reverse conductive-type anode diffusion layers(5,6) are formed away from a conductive-type semiconductor layer. Conductive-type cathode diffusion layers(10A,11A) are formed on the semiconductor layer. A third reverse conductive-type anode diffusion layer(9A) is extended to the cathode diffusion layers to be formed on the semiconductor layer. The third anode diffusion layer surrounds the first and second anode diffusion layers. A metal layer(14) for a Schottky barrier is formed on the first, second, and third diffusion layers. The cathode diffusion layers have different impurity concentrations. Impurity concentration of the third anode diffusion layer is lower than that of the first and second anode diffusion layers.
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