SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

A semiconductor device and a method for forming the same are provided to reduce a short channel effect by increasing a channel length of a transistor due to a protrusive upper gate electrode. A first interlayer dielectric(108) is formed on a semiconductor substrate(100). One or more trench(114) is formed on an upper surface of the first interlayer dielectric. The trench is filled with a first gate electrode(106). A first semiconductor pattern is formed on an upper surface of the first gate electrode. A first gate insulating layer(104) is inserted between the first gate electrode and the first semiconductor pattern. The first gate electrode is extended in a cross direction. The first semiconductor pattern crosses the first gate electrode.