| 摘要 |
A method for manufacturing a semiconductor device is provided to improve dry performance and to prevent the generation of watermarks on a substrate by reducing a contact angle of H2O. A doped polysilicon layer(410) is formed on an upper surface of a semiconductor substrate(400). An undoped polysilicon layer(420) is formed on an upper surface of the doped polysilicon layer. A cleaning process is performed to clean the semiconductor substrate. A thermal process is performed to process thermally the semiconductor substrate in order to diffuse impurities onto the undoped polysilicon layer. The doped polysilicon layer has a thickness of 800 to 1000Å. The undoped polysilicon layer has a thickness of 30 to 200Å.
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