| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent leakage current by suppressing the generation of perpendicular electric field in a source region and a drain region. A gate insulating layer is formed on a semiconductor substrate(101). A gate electrode is formed on the gate insulating layer. The width of the gate electrode is smaller than the width of the gate insulating layer. An insulating layer is formed on the gate electrode. A spacer is formed on a sidewall of the gate electrode and a sidewall of the insulating layer. A source(106a) and a drain(106b) are formed within the semiconductor substrate under both sides of the gate insulating layer.
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