| 摘要 |
A flash memory device and a program method thereof are provided to reduce interference between adjacent cells by programming all cells sharing an equal word line by performing program operation in a word line unit. A plurality of memory cell strings(S1-Si) comprise a plurality of memory cells storing data. A plurality of page buffers(PB1-PBi) are connected to the plurality of memory cell strings through bit lines. A plurality of first switching devices are connected to the bit lines, and supply a power supply voltage to the bit line according to a first signal. A plurality of second switching devices are connected between the page buffer and the bit line, and are turned on/off in response to a second signal.
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