| 摘要 |
A method for manufacturing a semiconductor device is provided to minimize the generation of a silicon horn at both sides of a groove by forming an isolation layer having a bulb-type structure. An isolation region of a semiconductor substrate(100) is etched to form a first trench. The semiconductor substrate is divided into the isolation region and an active region. A sacrificial spacer is formed on both sidewalls of the first trench. An isotropic etching process is performed on the substrate part under a lower surface of the first trench to form a bulb-type second trench(130) including the first trench. A bulb-type isolation layer(140) is formed in the second trench. A gate formation region of the active region of the substrate on which the bulb-type isolation layer is formed is etched to form a first groove. An isotropic etching process is performed on the substrate part under a lower surface of the first groove to form a second bulb-type groove(160) including the first groove. A bulb-type recess gate(200) is formed on the second bulb-type groove.
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