| 摘要 |
A method of forming a contact hole in a semiconductor device is provided to form a fine contact pattern less than 100nm by forming a recess whose width is narrower than that of a contact hole when an insulator layer is deposited within the contact hole. A method of forming a contact hole in a semiconductor device comprises the steps of: forming the first insulator film(110) and a hard mask film on a semiconductor substrate(100); etching the hard mask film to form the first contact hole(150); forming the second insulator film(160) on the entire structure including the hard mask layer, to form a recess whose width(d1) is narrower than width(d) of the first contact hole by step height of the first contact hole; removing the second insulator film on an upper surface of the hard mask film; etching the first insulator film by using the hard mask film and the second insulator film as an etch mask to form the second contact hole(150a).
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