| 摘要 |
A circuit of controlling a word line voltage of a memory device and a method of operating the same are provided to enable a word line to discharge a voltage rapidly regardless of the density of a chip. A normal pump(101) provides a bias voltage to a word line of a memory device during program or read operation of the memory device. A negative pump(102) discharges a bias voltage charged to the word line, after the program or read operation is completed. A MUX(103) connects the output of the normal pump or the negative pump to the word line selectively.
|
