CHEMICAL VAPOR DEPOSITION APPARATUS AND AN ISOLATION FILM DEPOSITION METHOD USING THE SAME

摘要

A chemical vapor deposition apparatus and an isolation film deposition method using the same are provided to maintain a deposition rate of an insulating layer under a pressure condition of a torque level lower than a constant torque level. A chamber(100) includes a heater block(150). A wafer is loaded on an upper surface of the heater block. A shower head(170) is positioned at an upper part of the inside of the chamber corresponding to the heater block in order to be lifted. The shower head is formed to inject a process gas. A pressure control unit(200) forms a constant degree of pressure in the inside of the chamber. A distance control unit(310,320) controls a distance of the heater block from the shower head. A control unit(400) is electrically connected to the pressure control unit and the distance control unit in order to control the process pressure and the distance.