IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

摘要

An image sensor and a method for manufacturing an image sensor are provided to improve hair defect by forming an interlayer dielectric through an SOG(Spin On Glass) process to allow uniform stress to be applied on the whole surface of a semiconductor substrate. A photodiode and a transistor are formed on a semiconductor substrate(200) on which an isolation region and an active region are defined. A first interlayer dielectric(208) is formed on the semiconductor substrate. A metal line(209) is formed on the first interlayer dielectric. A second interlayer dielectric(210) is formed on the first interlayer dielectric including the metal line. A color filter layer(212) and a micro lens(213) are formed on the second interlayer dielectric. A TEOS(Tetraethyl orthosilicate) layer(210a), an HSQ(Hydrogen Silsequioaxane) layer(210b), and a TEOS layer(210c) are sequentially laminated to form the first interlayer dielectric. The second interlayer dielectric is made of the TEOS layer, the HSQ layer, and the TEOS layer.