发明名称 MICROWAVE PLASMA PROCESSING DEVICE, MANUFACTURING METHOD OF DIELECTRIC WINDOW AND PROCESSING METHOD OF MICROWAVE PLASMA
摘要 A microwave plasma processing device, a manufacturing method of a dielectric window, and a processing method of a microwave plasma are provided to uniformly generate the plasma through a uniformly and slowly supplied gas to a predetermined position. A microwave plasma processing device includes a slot antenna, a dielectric window, a gas supply unit, and a processing chamber. The slot antenna propagates a microwave. The dielectric window transmits the propagated microwave. The gas supply unit supplies a predetermined gas. The processing chamber processes a subject by converting the predetermined gas into plasma with the microwave transmitted through the dielectric window. The dielectric window includes a first porous material(31Ph) and a second porous material(31Pl). The first porous material has first porosity. The second porous material is connected to the first porous material and has second porosity lower than the first porosity. The gas supply unit induces the predetermined gas in the processing chamber from the second porous material through the first porous material.
申请公布号 KR20080030511(A) 申请公布日期 2008.04.04
申请号 KR20070097497 申请日期 2007.09.27
申请人 TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY 发明人 HORIGUCHI TAKAHIRO;OHMI TADAHIRO;HIRAYAMA MASAKI
分类号 H05H1/24;H05H1/30;H05H1/46 主分类号 H05H1/24
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