| 摘要 |
A method for manufacturing a semiconductor device is provided to secure an effective channel length and to minimize adjacent gate influence by forming asymmetric bulb-type recesses. A barrier layer pattern(16a) is formed to expose a certain width between two gate forming regions on an active region and a certain width of the gate forming region adjacent to the active region. The barrier layer pattern and the active region are etched by a photolithography process using a mask defining the gate forming region to form a first recess having an inclined lower portion. A spacer is formed on a sidewall of the first recess. The inclined lower portion of the first recess is etched to form a second recess. The barrier layer pattern and the spacer are removed. A gate is formed on the first and second recesses. When the barrier layer pattern is formed, a barrier layer is formed on an upper portion of a semiconductor substrate(10). A photoresist layer pattern(18) is formed on an upper portion of the barrier layer. The barrier layer is etched by using the photoresist layer pattern as a mask to form the barrier layer pattern. The photoresist layer pattern is removed.
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