| 摘要 |
A CMOS image sensor and a manufacturing method thereof are provided to increase an amount of light reaching to a photo diode and optical efficiency by eliminating a color filter layer. A lower layer(122) is formed on a substrate(110) including a photo diode. An intermediate layer(124) is formed on the lower layer. The intermediate layer has a refractive index lower than that of the lower layer. The intermediate layer has steps among a red light region, a green light region, a blue light region. An upper layer(126) is formed on the intermediate layer and has a refractive index greater than that of the intermediate layer. A micro lens(130) is formed on the upper layer. The intermediate layer is a transparent material which has an imaginary part of a refractive index below 0.05 at a visible ray region. In the intermediate layer, a height of the red light region is equal to that of the intermediate layer, a height of the green light region is lower than that of the red light region, and a height of the blue light region is lower than that of the green light region.
|
