A method for manufacturing a light emitting diode chip is provided to reduce light shielding phenomenon due to the increase of a phosphor amount distributed on the center of a white light emitting device by forming an inclined sidewall in a semiconductor layer. A semiconductor layer(200) is laminated on a substrate(100). The semiconductor layer is provided with an active layer(220) between an N-type semiconductor layer(210) and a P-type semiconductor layer(230). A groove is formed on the semiconductor layer until the substrate is revealed, thereby creating an inclined sidewall on the semiconductor layer that is divided into a plurality of chip units. The inclined sidewall is formed by using a blade having an inclined edge for making the groove on the semiconductor layer. An inclined angle of the blade has a vertical angle in the range of 50 to 150 degrees.
