METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent deterioration of device characteristics due to impurities by removing residual insulating layers from a peripheral circuit region and depositing an insulating layer on the peripheral circuit region. A gate insulating layer(110), a first conductive layer(120), and a hard mask layer(130) are sequentially laminated on an active region of a semiconductor substrate(100). A trench(140) is formed on an isolation region of the semiconductor substrate. A first insulating layer(150) is formed on the semiconductor substrate in order to bury a part of the trench. A second insulating layer is formed on the first insulating layer in order to bury fully the trench. The first and second insulating layers are polished to expose the hard mask. The second insulating layer is removed by performing a wet-etch process. The first insulating layer is partially maintained on a sidewall of the laminated structure and a bottom surface of the trench. A third insulating layer(170) is laminated on the first insulating layer in order to form an isolation layer(180).