METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit device by which a signal delay in long distance wiring can be reduced by providing a most significant wiring layer without any constraint by an LSI process. SOLUTION: A process of providing a semiconductor integrated circuit substrate comprises: a process of forming on a base substrate 11 for a semiconductor integrated circuit the semiconductor integrated circuit and a wiring layer 12 which doesn't contain any most significant wiring layer for the semiconductor integrated circuit; and a process of forming on a wiring layer of the base substrate 11 for the semiconductor integrated circuit a connection pad 13 connected to the wiring layer. A process of providing a wiring substrate comprises: a process of carrying out on a base substrate 1 for the wiring substrate a plating of a thick film wiring layer 3 used as the most significant wiring layer for the semiconductor integrated circuit; and a process of forming on the thick film wiring layer 3 a bonding bump 6 connected to the thick film wiring layer 3. A face on which the connection pad 13 of the semiconductor integrated circuit substrate is formed is faced to a face on which the bonding bump 6 of the wiring substrate is formed, and the connection pad 13 and the bonding bump 6 are aligned and bonded. COPYRIGHT: (C)2008,JPO&INPIT