| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a high-performance phosphor thin film material that enables the formation of a crystallized pervoskite-related Ti, Zr oxide thin film on a glass or silicon substrate. SOLUTION: In the manufacturing method of a phosphor thin film, an organic metal thin film or a metal oxide film, which is formed on a substrate by adding at least one selected from Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu and optionally further adding at least one selected from Al, Ga and In to an oxide represented by the composition formula: ABO<SB>3</SB>, A<SB>2</SB>BO<SB>4</SB>or A<SB>3</SB>B<SB>2</SB>O<SB>7</SB>(provided that there may be deficiencies at A, B and O sites; A is at least one element selected from Ca, Sr and Ba; and B is at least one element selected from Ti and Zr), is irradiated with an ultraviolet lamp at room temperature and subsequently irradiated with an ultraviolet laser at a temperature of 400°C or lower. The film is subjected to an oxidation treatment after being crystallized. COPYRIGHT: (C)2008,JPO&INPIT
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