| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition or the like from which an insulation film suitable for the use as interlayer dielectrics in a semiconductor device or the like, and having excellent film characteristics can be formed. SOLUTION: The composition contains at least one of compounds represented by the following formulas (I) to (IV): (I) R<SB>4</SB>Si; (II) R<SB>3</SB>Si-(X-SiR<SB>2</SB>)<SB>m</SB>-X-Si-R<SB>3</SB>; (III) *-(X-SiR<SB>2</SB>)<SB>n</SB>-* and (IV) m-RSi(O<SB>0.5</SB>)<SB>3</SB>. [In the formulas (I) to (IV), R is a nonhydrolyzable group; X is -O- or the like; m is an integer of≥0; n is an integer of 2-16; *s of formula (III) are bonded to each other to form a ring; formula (IV) is a compound having m RSi(O<SB>0.5</SB>)<SB>3</SB>units each unit of which is linked to the other unit by sharing the oxygen atom in each unit to form a cage structure; and m is an integer of 8-16]. The method for producing a film by using the composition, the film produced by the method, and the semiconductor device including the film are also provided. COPYRIGHT: (C)2008,JPO&INPIT
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