发明名称 |
Resistive memory having shunted memory cells |
摘要 |
A memory includes a bit line and a plurality of resistive memory cells coupled to the bit line. Each resistive memory cell is programmable to each of at least three resistance states. The memory includes a first resistor for selectively coupling to the bit line to form a first current divider with a selected memory cell during a read operation.
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申请公布号 |
US2008080228(A1) |
申请公布日期 |
2008.04.03 |
申请号 |
US20060541973 |
申请日期 |
2006.10.02 |
申请人 |
NIRSCHL THOMAS;HAPP THOMAS;PHILIPP JAN BORIS |
发明人 |
NIRSCHL THOMAS;HAPP THOMAS;PHILIPP JAN BORIS |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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