发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device having a non-volatile memory and a method of manufacturing the same are provided. The semiconductor device includes a base material and a stack structure. The stack structure disposed on the base material at least includes a tunneling layer, a trapping layer and a dielectric layer. The trapping layer is disposed on the tunneling layer. The dielectric layer has a dielectric constant and is disposed on the trapping layer. The dielectric layer is transformed from a first solid state to a second solid state when the dielectric layer undergoes a process.
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申请公布号 |
US2008079064(A1) |
申请公布日期 |
2008.04.03 |
申请号 |
US20070898528 |
申请日期 |
2007.09.13 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LAI SHENG-CHIH;LUE HANG-TING |
分类号 |
H01L29/792;H01L21/336 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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