| 摘要 |
A method for forming a storage node contact in a semiconductor device includes forming a first insulation layer over a substrate including a landing plug, forming bit lines over the first insulation layer, each bit line including a bit line tungsten layer and a bit line hard mask, forming a second insulation layer over the first insulation layer, etching a portion of the second insulation layer to form a first open region, enlarging a width of the first open region, etching the remaining second insulation layer and the first insulation layer to form a second open region exposing a surface of the landing plug, forming spacers over sidewalls of a storage node contact hole including the first and second open regions, the spacers including an oxide-based layer and a nitride-based layer, and filling the storage node contact hole with a conductive material to form a storage node contact.
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