| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor photodetector, having a light-receiving layer which provides a wide detecting sensitivity in the long-wavelength zone and suppresses dark current by reducing defect density, and to provide its manufacturing method. <P>SOLUTION: The semiconductor photodetector is provided with an InP substrate 11, an In<SB>x</SB>Ga<SB>1-x</SB>As buffer layer 12 (0≤x≤1) and a light-receiving layer 13 which is positioned on the In<SB>x</SB>Ga<SB>1-x</SB>As buffer layer 12 and contains nitrogen. <P>COPYRIGHT: (C)2008,JPO&INPIT |
