| 摘要 |
PROBLEM TO BE SOLVED: To realize a structure which does not cause junction leak even if abnormal growth of silicide is generated in a PN junction diode element without increasing the number of processes in a semiconductor integrated circuit wherein a PN junction diode, a flash cell and a peripheral transistor are formed on the same chip. SOLUTION: The device has a diode element 24 and a flash cell 25 formed in a semiconductor substrate 1. The diode element 24 comprises a P-type well 21 formed in the semiconductor substrate 1, an N-type diffusion layer 8 formed on a P-type well 21 in the semiconductor substrate 1, an N-type second polysilicon film 9 formed in an upper side of the N-type diffusion layer 8 on the semiconductor substrate 1 and a nickel cilicide 12 formed on the second polysilicon film 9. The flash cell 25 is formed on the semiconductor substrate 1, and comprises the second polycilicon film 9 constituting a gate electrode. COPYRIGHT: (C)2008,JPO&INPIT
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