发明名称 PROCESS FOR FABRICATING SILICON DEVICE AND PROCESS FOR MANUFACTURING LIQUID EJECTION HEAD
摘要 PROBLEM TO BE SOLVED: To provide a process for fabricating a silicon device in which the yield can be enhanced by preventing production of foreign substances in the fabrication process, and to provide a process for manufacturing a liquid ejection head. SOLUTION: The process for fabricating a silicon device having a silicon substrate processed to have a predetermined shape by etching comprises a step for bonding a bonding substrate 130 having a diameter larger than that of a silicon wafer 110 having a chamfered part 111 on the periphery to the silicon wafer, a step for thinning the silicon wafer to which the bonding substrate is bonded to have a predetermined thickness, a step for forming a protective film 150 having an etching resistant layer composed of an etching resistant material at least on the surface layer on the bonding substrate to cover the chamfered part of the silicon wafer, a step for etching the silicon wafer to have a predetermined shape, and a step for dividing the silicon wafer into a plurality of silicon substrates. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008073929(A) 申请公布日期 2008.04.03
申请号 JP20060254894 申请日期 2006.09.20
申请人 SEIKO EPSON CORP 发明人 MURAMOTO YOSHIYUKI
分类号 B41J2/16;B41J2/045;B41J2/055 主分类号 B41J2/16
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