| 摘要 |
A method of controlling charge amount of an ion beam includes: providing a semiconductor wafer; forming insulation layer on the surface of the wafer, with gaps between the insulation layer dividing the surface of the wafer into an open region and a narrow and long region; implanting an ion beam into the wafer, in which a specific amount of electrons is added into the ion beam; emitting a plurality of light beams to the surface of the wafer along the open region and the narrow and long region, and measuring a plurality of light reflectivity; adjusting the amount of the added electrons according to the variation of the reflectivity. The method of the present invention can be used to determine whether the amount of added electrons is optimal by monitoring the uniformity of ion implantation, and make adjustment accordingly.
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