发明名称 |
NAND-type nonvolatile memory device and related method of manufacture |
摘要 |
In a NAND type nonvolatile memory device, a first insulating layer covers a common drain region formed in a string active region and a peripheral active region. A second insulating layer covers the first insulating layer. A bit line plug penetrates the first and second insulating layers and is connected to the common drain region. A peripheral lower plug penetrates the first insulating layer and is connected to the peripheral active region. A peripheral upper plug penetrates the second insulating layer and is stacked on the peripheral lower plug.
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申请公布号 |
US2008079091(A1) |
申请公布日期 |
2008.04.03 |
申请号 |
US20070651543 |
申请日期 |
2007.01.10 |
申请人 |
PARK HYUN-MOG;LEE SEUNG-JUN;KIM HYUN-JUNG |
发明人 |
PARK HYUN-MOG;LEE SEUNG-JUN;KIM HYUN-JUNG |
分类号 |
H01L29/76;H01L21/82 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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