| 摘要 |
<p>A flash memory device and a manufacturing method thereof are provided to improve operation reliability of the memory device by suppressing an operational error due to particles. A flash memory device includes first and second metal lines(10,20). The first metal line provides a bias voltage to a source pick-up terminal of a cell mat, which includes plural unit cells. The second metal line is arranged at an interface between the cell mats and provides the bias voltage to a well pick-up terminal of the cell mat. The first and second metal lines are arranged on multiple layers of metal lines. The first and second metal lines are arranged with spacing, which is greater than a distance between metal lines. The metal lines are formed under the first and second metal lines.</p> |
