| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to improve electric characteristics of the device by preventing bridge phenomenon between storage node contacts occurring due to a void. A method for manufacturing a semiconductor device comprises providing a semiconductor substrate(10) on which a barrier layer(20), a wire metal layer(30), and a hard mask nitride layer(40) are formed; forming a mask pattern shielding a bit line formation region on the hard mask nitride layer; firstly isotropic-etching the hard mask nitride layer using the mask pattern as an etch mask; secondly isotropic-etching the isotropic-etched hard mask nitride layer, the wire metal layer, and the barrier layer to form a bit line(50) in which both corners of the hard mask nitride layer are sloped using the mask pattern as an etch mask; removing the mask pattern; and forming an HDP insulation layer(70) on an entire surface of the substrate including the bit line to cover the bit line.
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